1996. 12. 18
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB988
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=-1.0V(Max.) at I
C
=-3A, I
B
=-0.3A.
Collector Power Dissipation
: P
C
=30W (Tc=25 ).
Complementary to KTD1351.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:60 120 , Y:100 200 , GR:150 300
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-7
V
Collector Current
I
C
-3
A
Base Current
I
B
-0.5
A
Collector Power
Dissipation
Ta=25
P
C
2.0
W
Tc=25
30
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-60V, I
E
=0
-
-
-100
A
Emitter Cut-off Current
I
EBO
V
EB
=-7V, I
C
=0
-
-
-100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-50mA, I
B
=0
-60
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-5V, I
C
=-0.5A
60
-
300
h
FE
(2)
V
CE
=-5V, I
C
=-3A
20
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-3A, I
B
=-0.3A
-
-0.5
-1.0
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-0.5A
-
-0.7
-1.0
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-0.5A
-
9
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
150
-
pF
Switching Time
Turn-on Time
t
on
-
0.4
-
S
Storage Time
t
stg
-
1.7
-
Fall Time
t
f
-
0.5
-
I
B1
15
B1
I
CC
V =-30V
I
B2
I
B2
20
sec
-I =I =0.2A
1%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
0
<
=
1996. 12. 18
2/2
KTB988
Revision No : 1
-0.02
CE(sat)
COLLECTOR CURRENT I (A)
V - I
COLLECTOR-EMITTER SATURATION
C
-0.02
-0.1
-0.3
-1
-3
1
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-1
-2
C
0
COLLECTOR CURRENT I (A)
-1
h - I
FE
C
C
COLLECTOR CURRENT I (A)
-0.02
FE
DC CURRENT GAIN h
30
TRANSIENT THERMAL RESISTANCE
1
th(t)
10
10
1
TIME t (sec)
th(t)
R - t
COLLECTOR CURRENT I (A)
C
-0.1
-5
-1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
10
COLLECTOR POWER DISSIPATION P (W)
0
C
150
50
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
-3
-4
-5
-6
-2
-3
COMMON
EMITTER
Tc=25 C
I =-10mA
B
-20
-30
-40
-50
-70
-80
0
-60
R ( C/W)
-3
-2
10
10
-1
2
10
0.1
100
10
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK
(1) Ta=2
5 C
(2) Tc=25 C
-0.1
-0.3
-1
-3
50
300
500
100
COMMON
EMITTER
V =-5V
CE
Tc=100 C
Tc=25 C
Tc=-25 C
100
200
20
30
40
Tc=Ta
1
INFINITE HEAT SINK
300x300x2mm Al
HEAT SINK
2
3
HEAT SINK
200x200x2mm Al
100x100x1mm Al
HEAT SINK
4
5
HEAT SINK
100x100x1mm Fe
50x50x1mm Al
HEAT SINK
6
7
HEAT SINK
50x50x1mm Fe
NO HEAT SINK
8
1
2
3
4
5
6
7
8
C
VOLTAGE V (V)
CE(sat)
-0.05
-0.1
-0.3
-0.5
-1
COMMON EMITTER
I /I =10
C B
Tc
=10
0 C
Tc=25 C
Tc=-25 C
-3
-10
-30 -50
-100
-0.3
-0.5
-1
-3
-5
-0.5
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH
INCREASE IN
TEMPERATURE
I MAX(PULSED)
C
I MAX
(CONTINUOUS)
C
DC OPE
RATION
Tc=25 C
V (MAX)
CEO
1m
s
10ms
100ms
1s
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